The German and Spanish research groups have collaborated to invent a new method for non-interfering detection of the tension of nano-semiconductor materials using infrared nano-field microscopy. This new method is for scientists to study the physical properties of semiconductor materials and to measure nano-scale semiconductor components. The performance offers new possibilities.
Participating in this invention are the Max Planck Institute for Biochemistry and Plasma Physics in Munich, Germany, and the Spanish Basque Institute in San Sebastian. A non-interfering and non-contact measurement technique has always been a great challenge for nano and semiconductor technology research. Therefore, this achievement is of great significance for the measurement of material tensile properties in the nanoscale category, and it can be used to determine high performance ceramics. Physical properties, as well as the electronic properties of modern semiconductor components.
Experts from the Max Planck Institute for Biochemistry and Plasma Physics in Germany first developed an infrared nano near-field microscope. This atomic microscope AFM-based nano near-field microscope uses a controllable grating beam of 20 nm to 40 nm diameter as an optical near Record the field and use a controllable beam to capture and capture the optical and physical properties of the material.
Recent studies have shown that infrared nano-microscopes can also find the finest tension and nanoscale cracks in crystalline materials. In an exemplary experiment, scientists applied different intensities of pressure to a test diamond, using nano-microscopes to track changes in the nano-tension field produced by the material under pressure. The images taken by nano-field microscopy successfully showed this measurement. Method reliability. Andrees Huber, an expert who participated in the experiment, commented that compared to other microscope techniques, such as electron microscopy, the new measurement method has many advantages. It does not require special preparation of the sample, thus avoiding the sample. Troublesome procedures such as standardized correction.
Potential applications for infrared near-field microscopy also include the detection of electronic load density and mobility of nanoscale tensile semiconductor materials, applied to the design of modern semiconductor material structures, directed to improve the performance of electronic components, and to make future computer chips smaller. Turn.
Participating in this invention are the Max Planck Institute for Biochemistry and Plasma Physics in Munich, Germany, and the Spanish Basque Institute in San Sebastian. A non-interfering and non-contact measurement technique has always been a great challenge for nano and semiconductor technology research. Therefore, this achievement is of great significance for the measurement of material tensile properties in the nanoscale category, and it can be used to determine high performance ceramics. Physical properties, as well as the electronic properties of modern semiconductor components.
Experts from the Max Planck Institute for Biochemistry and Plasma Physics in Germany first developed an infrared nano near-field microscope. This atomic microscope AFM-based nano near-field microscope uses a controllable grating beam of 20 nm to 40 nm diameter as an optical near Record the field and use a controllable beam to capture and capture the optical and physical properties of the material.
Recent studies have shown that infrared nano-microscopes can also find the finest tension and nanoscale cracks in crystalline materials. In an exemplary experiment, scientists applied different intensities of pressure to a test diamond, using nano-microscopes to track changes in the nano-tension field produced by the material under pressure. The images taken by nano-field microscopy successfully showed this measurement. Method reliability. Andrees Huber, an expert who participated in the experiment, commented that compared to other microscope techniques, such as electron microscopy, the new measurement method has many advantages. It does not require special preparation of the sample, thus avoiding the sample. Troublesome procedures such as standardized correction.
Potential applications for infrared near-field microscopy also include the detection of electronic load density and mobility of nanoscale tensile semiconductor materials, applied to the design of modern semiconductor material structures, directed to improve the performance of electronic components, and to make future computer chips smaller. Turn.
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