A research team from Tokyo Institute of Technology and Waseda University in Japan has developed a new technology for the production of thin film monocrystalline silicon solar cells, which is expected to significantly reduce production costs while maintaining the cell's conversion efficiency.
Scientists claim that they have been able to develop high-quality thin-film single-crystal silicon with a thickness of about 10 μm and a decrease in crystal defect density. The density of silicon has been reduced to the level of silicon wafer purity.
The research team explained that a single crystal thin film with high crystalline quality was obtained by a zone heating recrystallization method (ZHR method) to make the surface roughness of the silicon wafer reach 0.2 to 0.3 nm. "Using a double porous silicon layer can easily peel the grown film, and the resulting substrate can be reused or used as an evaporation source for film growth, which greatly reduces material loss."
According to scientists, this experimental process also proved that the surface roughness of the silicon wafer in the range of 0.1-0.2nm has an important influence on the formation of crystal defect density.
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