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Japanese scientists announced at the 25th International Conference on Photovoltaic Power Generation in Busan, South Korea, that a research team led by Japan’s science and technology promotion agency Nakajima Kazuo’s first use of standard quartz crucibles with a diameter of 50 cm made 40 cm. Above-diameter high quality silicon ingot single crystal.
Most of the current solar cells are silicon-based batteries, but the core part of the silicon crystal is of lower quality and higher cost. Solar cell companies are actively developing high-quality silicon crystals and low-cost production technologies to reduce the cost of power generation. The current mainstream method is the Czochralski method (CZ method), which uses a 60 cm diameter quartz crucible to make a 22 cm diameter silicon crystal, and one piece can only make a silicon wafer of a usual size (15.6 cm x 15.6 cm). The CZ method for making large-size silicon crystals requires a larger-sized quartz crucible, so it is difficult to reduce costs.
The research team adopted the new non-contact method (NOC method) developed by Yoshio Nakajima's formula. NOC method can obtain more than four times the area of ​​silicon crystals, but the temperature control is more difficult. They combined two heaters with carbon heat-retaining materials to achieve a large area of ​​low-temperature environment needed to generate large crystals. Thus, using a quartz crucible with a standard size of 50 cm in diameter, silicon single crystals having a diameter of 40 cm or more were successfully produced, and four wafers can be sliced ​​from one cross section.
The next goal of the research team is to continuously improve the quality of crystals and reduce the number of crystallographic transposition defects to zero, thus reducing production costs by 30%. (Reporter Chen Chao)
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